Field-effect transistor and the same associated with an optical semiconductor device
US4829346A · kind A · utility
15Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1988 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Jan 5, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0261
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor comprises a semi-insulating InP substrate, a strained buffer layer of Al.sub.X Ga.sub.1-X As grown on the substrate, and an active layer of GaAs. The active layer is eased in regard to the influence of the lattice mismatching between the active layer and substrate. Such a field-effect transistor is associated with an optical device in a monolithic manner on a common semi-insulating InP substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.