Monolithic integrated semiconductor means to reduce power dissipation of a parasitic transistor

US4829360A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Gerhard Conzelmann · Echterdingen, DE
• Karl Nagel · Gomaringen, DE

Key dates

• Filing date: May 5, 1987
• Grant date: May 9, 1989
• Expiry date: May 5, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/615

Abstract

A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base of a parasitic substrate transistor (4). In order to reduce the power loss caused by means of this parasitic substrate transistor (4), means (8) for increasing the collector path resistance (41) of the parasitic transistor (4) are provided.