Charged particle beam lithography system
US4829444A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1986 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Oct 24, 2006 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.