Method for producing material for semiconductor device
US4830820A · kind A · utility
12Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1987 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | Apr 20, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S165/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.