Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof
US4830983A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 5, 1987 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | Nov 5, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A two step annealing process is utilized for performing imputity induced disordering comprising an initial higher temperature, shorter term or rapid thermal anneal (RTA) treatment followed by a lower temperature, longer term or slow thermal anneal (STA) treatment. This two step impurity induced disordering (IID) anneal process enhances the amount of and depth of impurity species or diffusant penetration into the crystalline structure undergoing IID treatment. Also, it provides for improved accuracy in controlling the extend of impurity species concentration and the extent of its penetration into the cyrstalline structure so that resulting diffusion profiles in such structures can be systematically reproduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.