Insulated gate semiconductor device with back-to-back diodes
US4831424A · kind A · utility
31Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1987 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | Jun 15, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.