Capacitor construction for use in pressure transducers
US4831492A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 4, 1988 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | May 4, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0073
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This publication discloses a capacitor construction for use in pressure transducers, including a substrate plate having of a silicon wafer and a thinner glass wafer. A first fixed capacitor plate is provided for overlying the substrate plate plate. A silicon plate is adapted to encircle the substrate plate with its thinned center area acting as a moving capacitor plate by virtue of its diaphragm behavior and a top plate overlying the silicon plate includes a silicon wafer and a glass wafer bonded to the silicon wafer and having a thickness essentially smaller than that of the silicon wafer. According to the invention, over the supporting substrate plate and between the first capacitor plate and its encircling silicon plate, is provided another overlying capacitor overlying plate, which essentially encloses the first capacitor plate. With this design, a reduced temperature sensitivity is accomplished in the capacitor construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.