Plasma processing apparatus
US4831963A · kind A · utility
42Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1987 |
| Grant date | May 23, 1989 |
| Priority date | — |
| Expiry date | Feb 2, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus which is effective for surface processing uses a reactive gas activated by plasma excited by microwave energy. Generation and maintaining of the plasma excited by the microwave energy are different where pressure in the gas chamber is above 0.1 Torr. Generating a high density plasma and maintaining the plasma includes the use of a protrudent window which extends into the activating chamber which also operates as a cavity resonator. Oxidation of resist formed on the surface of VLSI may be provided and damage by charge particles prevented by use of a magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.