Co-based alloy sputter target and process of manufacturing the same
US4832810A · kind A · utility
19Cited by
5References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 7, 1987 |
| Grant date | May 23, 1989 |
| Priority date | — |
| Expiry date | Jul 7, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F1/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state. The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.