Process for metal nitride deposition
US4832986A · kind A · utility
20Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1987 |
| Grant date | May 23, 1989 |
| Priority date | — |
| Expiry date | Jul 6, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for forming metal nitride films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a dialkyl(Group III metal) azide, so as to deposit a film of the corresponding metal nitride on the surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.