Method for producing a silicon thin film by MBE using silicon beam precleaning
US4833100A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1986 |
| Grant date | May 23, 1989 |
| Priority date | — |
| Expiry date | Dec 8, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam epitaxy method. Silicon molecular beams are irradiated onto the substrate under the conditions wherein a substrate temperature is kept at 700.degree. to 900.degree. C. and an intensity of the molecular beams is kept within a range from 1.times.10.sup.12 atoms/cm.sup.2 .multidot.sec to 1.times.10.sup.13 atoms/cm.sup.2 .multidot.sec to clean a surface of the substrate and then the intensity of the molecular beams is increased to form the single crystalline silicon film. Thus, the substrate can be cleaned without being defected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.