Semiconductor memory device having high capacitance and improved radiation immunity
US4833647A · kind A · utility
14Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1986 |
| Grant date | May 23, 1989 |
| Priority date | — |
| Expiry date | Sep 5, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
Abstract
The semiconductor memory device of the present invention is formed on an integrated substrate and is immune to alpha radiation. The device includes a semiconductor substrate of a first conductive type and a memory cell formed in the substrate which has a switching MOS transistor having at least a first impurity region of a second conductive type and a capacitor connected to the transistor for storing memory data. A second impurity region of the first conductive type and having a higher concentration than that of the substrate is provided on the substrate surface at a position covering the first impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.