CVD reactor and gas injection system
US4834022A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Oct 27, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor has a unique geometry to control the thickness of a film formed on the surface of a substrate. The reactor is approximately cylindrical in shape. The base of the reactor is inclined at an angle of approximately 3.degree.-5.degree. from the vertical and has a central platform with a recessed well. The substrate is placed in the well so that the surface of the substrate on which the film is deposited does not protrude above the platform surface. The reactant gases are mixed in a region adjacent the cylindrical wall of the reactor and flow radially inward across the wafer surface. The thickness of the deposited film is controlled by contouring a plate positioned opposite the wafer surface so that the distance between the wafer surface and the plate, and hence the deposition rate, is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.