Light receiving member having a light receiving layer of a-Si(Ge,Sn)(H,X) and a-Si(H,X) layers on a support having spherical dimples with inside faces having minute irregularities
US4834501A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1986 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Oct 24, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light receiving member has a support and a light receiving layer. The light receiving layer has an inner layer composed of a-Si(Ge,Sn)(H,X) and an outer layer composed of a-Si(H,X) containing neither germanium atoms nor tin atoms. The support has an uneven surface of spherical dimples, each having an inside face provided with minute irregularities. The light receiving member exhibits high photosensitivity in the entire visible region of light; exhibits an excellent matching property with a semiconductor laser and shows quick light response. The member is suited for image formation by using coherent light, free from interference fringe patterns and spots upon reversed development even after repeated use for a long period of time. The member is free from defective images or blurring, shows high density with clear half tones, has a high resolving power, and can provide high quality images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.