Laser photochemical etching using surface halogenation
US4834834A · kind A · utility
29Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Nov 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/061
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for maskless patterning and etching of metals is disclosed. The method comprises the steps of providing a metal, forming a passivating layer of an oxide or nitride upon the surface of the metal, exposing the metal to a halogenous atmosphere, while patterning the metal using a directed energy beam to selectively replace the oxides or nitrides with halides, and heating the patterned metal while exposing it to an etchant to etch regions located below the halogenated surfaces leaving the remaining passivated regons intact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.