Fabrication of dielectrically isolated devices with buried conductive layers
US4835113A · kind A · utility
12Cited by
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20Claims
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Assignee
Inventors
Key dates
| Filing date | Nov 23, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Nov 23, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76297
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.