Semiconductor device having a quantum wire and a method of producing the same
US4835578A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Dec 30, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.