Electron gas hole gas tunneling transistor device
US4835581A · kind A · utility
17Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Jul 23, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/213
Abstract
Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.