Method of producing sheets of crystalline material
US4837182A · kind A · utility
64Cited by
20References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1987 |
| Grant date | Jun 6, 1989 |
| Priority date | — |
| Expiry date | Dec 4, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.