Large-area, low capacitance semiconductor arrangement

US4837607A · kind A · utility

Inventors

• Josef Kemmer · Oberschleißheim, DE
• Gerhard Lutz · Munich, DE

Key dates

• Filing date: Dec 24, 1985
• Grant date: Jun 6, 1989
• Expiry date: Dec 24, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A description is given of a semiconductor detector with a low capacitance for detecting radiation and particles having a semiconductor body of a first conductivity type, to which is applied at least one collecting electrode for the majority carriers. Regions of a second conductivity type are provided on the two main surfaces of the semiconductor body and with the latter form depletion layers biased in such a way that the semiconductor body is substantially completely depleted of majority carriers and in the semiconductor body a potential gradient is present, through which flow to the collecting electrode the majority carriers produced by the radiation. An embodiment of the invention is characterized in that, on one of the two main surfaces between the regions of the second conductivity type are provided zones of the first conductivity type which are reverse biased compared with the regions of the second conductivity type and on the other main surface is provided a large-area region of the second conductivity type with a low surface resistance. Another embodiment of the invention is characterized in that, on at least one of the two main surfaces between the regions of the second con…