Method for making tungsten-titanium sputtering targets and product
US4838935A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1988 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | May 31, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22C1/045
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Tungsten-titanium sputtering targets with improved characteristics are made from high-purity tungsten powder and a second powder consisting of high-purity titanium hydride powder or high-purity titanium hydride powder and high-purity titanium powder. The second powder contains at least 5%, preferably 25% to 100% by weight of titanium hydride powder. A powder mixture having a binodal particle size distribution with respect to the tungsten and second powders is placed under a containment pressure in a die. The die is heated in a vacuum hot-press chamber to a temperature sufficient to dehydride the titanium hydride, and to remove gases and alkali metals. The die is then heated to a second temperature in the range of 1350.degree. to 1550.degree. C. while maintaining the containment pressure and vacuum. A compaction force in the range of 2000 to 5000 psi is then applied to form a compact. The compaction force and vacuum are subsequently released and the compact is cooled. The compact is easily machined to give a sputtering target having a density of at least 95%, preferably, at least 100% of theoretical density, a total gas content of less than 850 ppm, a carbon content of less than 100…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.