Stabilization of intraconnections and interfaces
US4838950A · kind A · utility
3Cited by
2References
16Claims
0Family size
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Inventor
Key dates
| Filing date | Apr 22, 1988 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Apr 22, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal hydroxides, such as those of nickel, chromium, cobalt or related metals, followed by rinsing the non-sensitive side of the device in de-ionized water. After air drying, the deposition of an overlying second electrode is carried out by a metallization technique. The device is then heated in air, at 150.degree. C. for four hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.