Chemical vapor deposition reactor
US4839145A · kind A · utility
53Cited by
14References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1986 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Aug 27, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading or top-loading mechanisms are provided for loading and unloading the susceptors through a gate valve. A diffuser below the reaction zone adjusts the gas flow into the reaction zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.