High mobility transistor with opposed-gates
US4839310A · kind A · utility
16Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1988 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Jan 27, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.