High-gain photodetectors made from NIPI mesas with selective lateral contacts
US4839714A · kind A · utility
9Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1988 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Mar 14, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A selective contact to a NIPI doping superlattice having a trap free (or low trap density) contact in contact with the layers of the superlattice. In a NIPI superlattice, the trap free region is a doped region that can be produced: by diffusion of dopant ions from a doped metal contact; by overdoping of the edges of the superlattice; or by overgrowth of the edges of the superlattice with a doped material that is trap free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.