Patent · US Expired

Semiconductor laser with constant differential quantum efficiency or constant optical power output

US4839901A · kind A · utility

6Cited by

1References

3Claims

0Family size

Assignee

Alcatel N.V. · NL

Inventors

Albrecht Mozer · Burghausen, DE
Kurt Losch · Stuttgart, DE

Key dates

Filing date	Aug 24, 1988
Grant date	Jun 13, 1989
Priority date	—
Expiry date	Aug 24, 2008

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/0284
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser is disclosed whose front or rear surface is provided with a multilayer dielectric and/or reflective coating in such a way that either a temperature-independent differential quantum efficiency or a temperature-independent power output is obtained. The sequence of layers is chosen so that the reflection coefficient decreases with increasing light wavelength. (In other laser systems, it may be necessary for the reflection coefficient to increase).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.