Integrated silicon plasma switch
US4840122A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 1988 |
| Grant date | Jun 20, 1989 |
| Priority date | — |
| Expiry date | Apr 18, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01T2/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A switch device for one-time use in conducting very high currents comprising a silicon substrate on which is deposited a amorphous silicon or polysilicon strip extending as a bridge between first and second spaced-apart metal contacts deposited on the silicon substrate. Also deposited on the same substrate on opposite sides of the bridge and spaced from it are a set of high voltage contacts. When a high voltage is applied across the contacts, no current flows until a trigger current is made to flow through the bridge, the trigger current being sufficiently large to vaporize the bridge creating a plasma cloud. The plasma, being highly conductive, allows a very large current to flow between the high voltage contacts. The device of the present invention finds special application as part of a detonation system for high explosive ammunitions. This specification discloses various modifications to the above structure to achieve desired performance characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.