Patent · US Expired

Inorganic polysilazane and method of producing the same

US4840778A · kind A · utility

17Cited by
7References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 26, 1985
Grant dateJun 20, 1989
Priority date
Expiry dateNov 26, 2005

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2004/10
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Novel primarily chain inorganic polysilazanes of average molecular weight of 690 to 2000 are prepared from novel adducts of a halosilane and a base by reacting the adducts with ammonia in unreactive solvents. Silicon nitride is prepared by heating the polysilazanes at 1000.degree. to 1600.degree. C., preferably below 1300.degree. C., most preferably 1000.degree. to 1100.degree. C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.