Process for the growth of III-V group compound semiconductor crystal on a Si substrate
US4840921A · kind A · utility
80Cited by
5References
5Claims
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Inventor
Key dates
| Filing date | Jun 30, 1988 |
| Grant date | Jun 20, 1989 |
| Priority date | — |
| Expiry date | Jun 30, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a process for the growth of III-V group compound semiconductor crystal on a Si substrate, chloride gas of an element selected from In and Ga of III group elements and hydride gas of an element selected from V group elements are alternately supplied into a growing chamber to grow III-V group compound semiconductor crystal on a Si substrate. As a result, the crystal is of a good selective growth property and of a good crystal property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.