Method of manufacturing masked semiconductor laser
US4840922A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 13, 1987 |
| Grant date | Jun 20, 1989 |
| Priority date | — |
| Expiry date | Oct 13, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking or cutting off light emitted from the semiconductor laser body and of being made optically transparent by exposure to the light emitted from the semiconductor laser body dependent on the amount of energy of the emitted light. When the light is emitted from the semiconductor laser body on which the masking layer is deposited, a small light-emitting hole is defined in the masking layer, the light-emitting hole having a desired diameter commensurate with the amount of energy of the emitted light which is applied to the masking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.