Method of forming a copper film by chemical vapor deposition
US4842891A · kind A · utility
21Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1988 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Feb 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper film is formed by bringing the vapor of an inorganic compound of copper, such as cuprous nitrate that vaporizes upon heating, into contact with a reducing gas in the reaction chamber, so that copper ions are reduced into metal copper that is to be deposited on a substrate. The obtained copper film exhibits very good step coverage and contains very little impurities, lending itself well for forming interconnections of a semiconductor device that has a high degree of integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.