Vacuum deposition of selenium alloy
US4842973A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1988 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Apr 8, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08207
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate. A plurality of selenium containing layers may be formed by providing in a vacuum chamber at least one first layer crucible containing particles of selenium or a sellenium alloy, at least one second layer crucible containing particles of an alloy comprising selenium, and a substrate, applying a partial vacuum to the vacuum chamber, heating the particles in the first layer crucible to deposit a thin continuous selenium or a selenium alloy first layer on the substrate, maintaining the particles in the second layer crucible at a first temperature below about 130.degree. C. while the thin continuous selenium or a selenium alloy first laye…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.