Method for producing a spatially periodic semiconductor layer structure

US4843028A · kind A · utility

Assignee

• Icentia Patent-Verwaltungs-GmbH · DE

Inventors

• Hans-Joest Herzog · Neu-Ulm, DE
• Helmut Jorke · Gerstetten, DE
• Horst Kibbel · Erbach, DE

Key dates

• Filing date: Dec 8, 1988
• Grant date: Jun 27, 1989
• Expiry date: Dec 8, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/938
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.