Magnetic field sensor
US4843444A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1988 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Apr 14, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantageously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.