Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen
US4844587A · kind A · utility
2Cited by
4References
8Claims
0Family size
Inventors
Key dates
| Filing date | Jul 10, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Jul 10, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/103
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor making it possible to obtain thin film transistors is of hydrogenated amorphous silicon carbide. As this material is transparent, the stack constituted by the semiconductor and the insulant can be maintained over the entire wall, so that there is no need to expose the columns and blocks. Application to flat-faced screen displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.