Process for producing patterns in dielectric layers formed by plasma enhanced chemical vapor deposition (PECVD)
US4844945A · kind A · utility
4Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | May 18, 1988 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | May 18, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a dielectric patterned layer of any desired geometry on a selected substrate which includes vapor depositing selected reactants on said substrate only in areas thereon which are coextensive with the surface area of an adjacent metal electrode pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.