Producing a compound semiconductor device on an oxygen implanted silicon substrate
US4845044A · kind A · utility
45Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1988 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Jul 28, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.