Low temperature chemical vapor deposition of silicon dioxide films
US4845054A · kind A · utility
103Cited by
7References
1Claims
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Key dates
| Filing date | Jun 29, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Jun 29, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for low temperature chemical vapor deposition of an SiO.sub.2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO.sub.2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO.sub.2 based films with oxides of phosphorus and boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.