Tunneling emitter bipolar transistor
US4845541A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1988 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Jun 6, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/165
Abstract
A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.