Dynamic memory with single-cycle writing of a field of logic states
US4845673A · kind A · utility
5Cited by
3References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 9, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Feb 9, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4074
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to a dynamic memory. The voltage of the hot spot of the storage capacitor is carried to a value such that all the cells comprise the same logic value, owing to a potential generator. It is thus possible to write and read bit fields on a large-capacity memory at high speed. This device has applications with respect to image memories and for manufacturing tests.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.