High resistivity chromium silicide films
US4846949A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1987 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Oct 30, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High resistivity chromium silicide coatings that are chemically, physically, and electrically stable at high temperatures are provided. The coatings are applied to substrates, optionally over a barrier layer of dielectric. The coatings are deposited in a magnetron sputtering process involving sputtering of a CrSi.sub.2 target in the presence of a gaseous mixture that includes nitrogen. The coatings so provided typically have resistivities on the order of 100 to 20,000 ohms per square. The degree of nitrogen incorporation varies with the thickness of the chromium silicide to give selected ranges of stable products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.