Method of manufacturing semiconductor devices and product therefrom
US4847211A · kind A · utility
18Cited by
15References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 27, 1987 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Apr 27, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film semiconductor device, for example a transistor, is fabricated by depositing layers of materials of appropriate electrical characteristics on an insulating substrate 1. To manufacture a transistor, firstly an insulating base layer 2 is applied which is then followed by a gate electrode 3, an insulation layer 4 and a semiconductor layer 5. Source and drain electrodes 6 and 7 are then applied and finally a protective layer 8 encapsulates the device. In order to improve the life of the device it is annealed firstly in a reducing atmosphere and then in an oxidizing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.