Hot electron transistors
US4847666A · kind A · utility
34Cited by
12References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1987 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Dec 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
Abstract
In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium and selenium in the host crystal or by superlattices of PbTe-CdTe. Variations described use either a tunneling barrier, graded barrier or camel diode barrier are used at the emitting junction. Other embodiments use a bismuth-antimony semiconductor alloy for one or more of the layers of the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.