Tandem photoelectric conversion device
US4847669A · kind A · utility
17Cited by
0References
6Claims
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Key dates
| Filing date | Dec 17, 1986 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Dec 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.