Single wavelength semiconductor laser
US4847857A · kind A · utility
15Cited by
1References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1988 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Jul 7, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1243
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a single wavelength oscillation semiconductor laser having a diffraction grating at the active region, the coupling coefficient between the light and the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface. The amplitude of the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface, or the active layer or the guide layer is thick within the laser and thin in the neighborhood of the resonator end surface. Thus, the laser oscillates at a single wavelength even at high power output operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.