Method of forming silicon and oxygen containing layers
US4849259A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Mar 19, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Layers containing silicon and oxygen are formed by means of low pressure chemical vapor deposition. As a source for silicon and oxygen, tetraethylorthosilicate (TEOS) is used which is drawn into the low pressure area of the deposition apparatus in liquid form and evaporated there. If necessary, oxygen is introduced into the low pressure area. The reactants are directed into the reaction zone which has been heated to a predetermined temperature, and reacted there. The reaction product is deposited onto the substrates provided therein. If the deposited layer is to comprise still further elements, liquid substances containing such elements are mixed with the liquid TEOS prior to being drawn into the evaporating area, in a ratio adapted to the desired layer composition. Both with respect to layer thickness and composition the layers deposited are highly homogeneous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.