Method of sealing an electrical feedthrough in a semiconductor device
US4849374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1988 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Aug 3, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.