Thin film transistor
US4849797A · kind A · utility
59Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1988 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Jan 20, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.