Resonant tunneling transistor

US4849799A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Federico Capasso · Westfield, US
• Harry T. French · New York, US
• Arthur C. Gossard · Hackettstown, US
• Albert Lee Hutchinson · Piscataway, US
• Richard A. Kiehl · Kawasaki, JP
• Sustana Sen · Scotch Plains, US

Key dates

• Filing date: Aug 18, 1986
• Grant date: Jul 18, 1989
• Expiry date: Aug 18, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/231
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.