Semiconductor component
US4849800A · kind A · utility
10Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Sep 18, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor component, which has various differently doped layers (2, 3, 4, 5) within a semiconductor substrate, an improvement of the electrical properties is achieved, wherein the thickness of the substrate in the current-carrying region is locally reduced by a deep etch well (10), the original mechanical stability of the semiconductor substrate largely remaining retained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.